tlp830(f) 2007-10-01 1 toshiba photointerrupter in frared led + phototransistor tlp830(f) lead(pb)-free track "00" sensor for floppy disk drive detection of sub ? scanning quantity by image scanner various position detection sensor tlp830(f) is a photointerrupter which uses a high ? radiant power gaas led and a fast ? response si phototransistor. the device is high resolution with a narrow slit pitch. ? small package: 7. 4mm (h), 4.5mm (d) ? printed wiring board direct mounting type (with a locating pin). ? board thickness: 1mm or less ? short lead type enabling automated mounting ? gap: 2mm ? high resolution: slit width 0.15mm ? high current transfer ratio: i c /i f = 3% (min) ? material of the package : polybutylene terephthalate (ul94v ? 0, black color) ? detector side is of visible light cut type. absolute maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 50 ma ta > 25c ?0.33 forward current derating ta > 85c i f / c ?2 ma / c led reverse voltage v r 5 v collector ? emitter voltage v ceo 35 v emitter ?collector voltage v eco 5 v collector power dissipation p c 75 mw collector power dissipation derating (ta > 25c) p c / c ? 1 mw / c detector collector current i c 50 ma operating temperature range t opr ?30~85 c storage temperature range t stg ?40~100 c soldering temperature (5 s) t sol 260 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings and the operating ranges. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). toshiba 11 ? 11c1 weight: 0.4 g (typ.)
tlp830(f) 2007-10-01 2 product indication monthl y p roduction lot production month (jan.-dec. are indicated by alphabetes of a-l) production year (last digit of a.d. is indicated) operating ranges characteristic symbol min typ. max unit supply voltage v cc D 5 24 v forward current i f D D 25 ma operating temperature t opr ?10 D 75 c opto electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit forward voltage v f i f = 10 ma 1.00 1.15 1.30 v reverse current i r v r = 5 v D D 10 a led peak emission wavelength p i f = 10 ma D 940 D nm dark current i d v ce = 24 v, i f = 0 D D 0.1 a detector peak sensitivity wavelength p D 870 D nm current transfer ratio i c /i f v ce = 2 v, i f = 10 ma 3 D 20 % collector ?emitter saturation voltage v ce (sat) i f = 20 ma, i c = 0.3 ma D 0.1 0.35 v rise time t r D 15 D fall time t f v cc = 5 v, i c = 1 ma r l = 1 k ? D 15 D response time (1) t 1 D D 80 coupled switching times response time (2) t 2 v cc = 4.4 v, i c = 13 ma r l = 47 k ? (note) D D 800 s note: t 1 , t 2 test condition v out i f 2.5v 0.8v t 1 t 2 r l =47k ? i f =13ma v out v cc =4.4v
tlp830(f) 2007-10-01 3 precaution 1. if the chemical are used for cleaning, the soldered surface on ly shall be cleaned with chemicals avoiding the whole cleaning of the package. 2. the container is made of polybutylene terephthalate. oil or chemicals may cause melting or cracks. check the environment carefully before installing. 3. shall be mounted on an unwarped surface. 4. a visible light cut ? off type photo transistor which blocks light with frequencies of 700nm or above is used. however, the device cannot block ambient light with a wavelength of 700nm or more or sunlight. install avoiding the disturbance light. 5. conversion efficiency falls over time due to the current which flows in the infrared led. when designing a circuit, take into account this change in conversion effi ciency over time. the ratio of fluctuation in conversion efficiency to fluctuation in infr ared led optical output is 1: 1. (0) o p (t) o p (0) f i / c i (t) f i / c i =
tlp830(f) 2007-10-01 4 outline: toshiba unit: mm weight: 0.4 g (typ.) pin connections 3 4 2 1 1. anode 2. cathode 3. collector 4. emitter
tlp830(f) 2007-10-01 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 0 20 40 60 80 100 80 0 60 40 20 p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 80 0 0 60 40 20 20 40 60 80 100 i f ? v f (typ.) forward voltage v f (v) forward current i f (ma) 50 1 0.8 30 10 5 3 0.9 1.0 1.1 1.2 1.3 1.4 ta=75c 25 0 ? 25 50 i c / i f ? i f (typ.) forward current i f (ma) current transfer ratio i c / i f (%) 100 1 50 30 10 5 3 3 5 10 30 100 50 ta =25 c v ce = 2 v v ce = 0.4 v
tlp830(f) 2007-10-01 6 i c ? i f (typ.) forward current i f (ma) collector current i c (ma) 10 0.1 1 5 3 1 0.5 0.3 3 5 10 30 50 100 ta =25 c v ce = 2 v v ce = 0.4 v i c ? v ce (typ.) collector-emitter voltage v ce (v) collector current i c (ma) 3.0 0 0 2.5 1.5 1.0 0.5 2 4 6 8 10 12 2.0 20 1 5 10 i f =5ma ta = 25 c relative i c ? ta (typ.) ambient temperature ta (c) relative collector current 1.2 0.2 1.0 0.8 0.6 0.4 ? 40 ? 20 0 20 40 60 80 100 v ce = 2 v i f = 20 ma i f = 10 ma i f = 5 ma i d (i ceo) ? ta (typ.) ambient temperature ta (c) dark current i d( i ceo) ( a) 5 0 1 10 ? 1 10 ? 2 10 ? 3 10 ? 4 20 40 60 80 100 120 v ce = 24 v 10 5
tlp830(f) 2007-10-01 7 v ce(sat) ? ta (typ.) ambient temperature ta (c) collector-emitter saturation voltage v ce(sat) (v) 0.20 0 ? 40 0.16 0.12 0.08 0.04 ? 20 0 20 40 60 80 100 i c = 0.5 ma i f = 20 ma switching characteristics (non saturated operation) (typ.) load resistance r l (k ? ) switching time ( s) 500 0.3 0.1 300 100 50 30 10 5 3 1 0.5 0.3 0.5 1 3 5 10 30 50 t s t d t r ? t f ta = 25 c v cc = 5 v v out = 1 v switching characteristics (saturated operation) (typ.) load resistance r l (k ? ) switching time ( s) 3000 3 1 1000 500 300 100 50 30 10 5 3 5 10 30 50 100 300 500 t d t r t s t f ta = 25 c i f = 20 ma v cc = 5 v v out R 4.65v r l v out 90% t f t r i f 10% t d t s i f v out v cc switching time test circuit
tlp830(f) 2007-10-01 8 positioning of shutter and device to operate correctly, make sure that the shutter and th e device are positioned as shown in the figure below. the shit pitch of the shutter must be set wider than the slit width of the device. determine the width taking the swit ching time into consideration. a a shutter sensor cente r a - a ? cross section 5.5 6.6min. 4.0max. unit in mm distance d (mm) detecting position characteristics(1) (typ.) relative collector current 1.2 0 ? 0.2 1.0 0.8 0.6 0.4 0.2 ? 0.1 0 0.1 0.2 0.3 0.4 0 ? + d i f =10ma v ce =2v ta=25c shutter detection p osition d = 0 0.11 mm detecting position characteristics(2) (typ.) distance d (mm) relative collector current 1.2 0 1.0 0.8 0.6 0.4 0.2 3 4 5 6 7 8 9 d i f =10ma v ce =2v ta=25c shutter detection p osition d=5.5 ? 1.5 mm +1.1
tlp830(f) 2007-10-01 9 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? gaas(gallium arsenide) is used in this product. the dus t or vapor is harmful to the human body. do not break, cut, crush or dissolve chemically. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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